Good morning.
I followed your specifications and changed the Samsung memory settings. Here are my settings for the Samsung memory card, and the amd-info output.
The card temp is 66c.
Any suggestions for improving the settings for stability and efficiency?
What are the temp guidelines for Micron's memory?
Greetings,
Please follow the guide below,
The below is the settings for best performance and power consumption for safe 24/7 operating and work well with TeamRedMiner Mode B,
÷ Using MorePowerTool from the kindly attached link below,
Apply the setting below,
- Under Features tab, set:
Zero RPM: Uncheck (Disable, for those who have high memory temperature)
- Under Overdrive Limits tab, set:
GFX Maximum Clock 1440 MHz
Memory Maximum Clock 960 MHz
Power Limit Maximum 0%
Power Limit Minimum 0%
Memory Timing Control: 1 [For computing (mining), default is 2 for gaming]
Zero RPM Control: 0 (For those who have high memory temperature)
- Under Feature Control (For stable Hashrate and to prevent hashrate from dropping to 0 MH/s in addition to disable R6 Render Standby in the motherboard bios settings if exists), set:
DS_GFXCLK: Uncheck (Disable)
ACDC: Check (Enable for non XT cards)
- Under Power and Voltages, set:
Maximum Voltage GFX: 1050 mV
[must not be lower than this as the MVDD default value in the vbios is at 1350 mV and the VDD must be within 300 mV range with MVDD or components may get degraded and permanent damaged]
Maximum Voltage SoC: 1050 mV
[must not be lower than this like the Maximum Voltage GFX]
Minimum Voltage GFX: 750 mV
Minimum Voltage SoC: 750 mV
TDP Power Limit GPU: 150 W (140 W for non XT)
TDC Limit GFX: 136 A (126 A for non XT)
TDC Limit SoC: 14 A
- Under Frequency tap, set:
GFX Maximum: 1260 MHz
Memory DPM 3: 900 MHz
[Regarding SoC Maximum, must be kept at default 1267 MHz in the vbios, capping it at another value must be done inside the OS using a script in linux or editing the registry using MorePowerTool in Windows and at your own discretion, recommended values for memory types at specific clocks as below,
Memory Clock - - - > SoC Maximum,
910 (1820) MHz - - - > 957 MHz (Samsung, Micron & Hynix),
950 (1900) MHz - - - > 1093 MHz (Micron & Hynix, here the default 1267 MHz is preferred),
- Under Fan tab, set:
Zero RPM Enabled: Uncheck (Disable, for those who have high memory temperature)
Stop Temperature: 50° C
Start Temperature: 60° C
÷ Regarding the memory vram timings, use the RedBiosEditor from the kindly attached link below,
to load your backup vbios and power table .mpt file and after that use one of the options below to modify the vram timings then click on "Save" and choose the desired place to get the final modified vbios file ready to flash,
The 2 options below for vram timings are the best ones for stability, performance and power consumption,
Option 1 (Preferred and Recommended), applying Apple Inc. vram timings straps linked below, once for MT61K256M32 Micron, and Save the vbios after that load the saved vbios and once again apply the straps for K4Z80325BC Samsung if it is existed and save the vbios again,
Option 2 (Universal), applying vram timings as below for both Samsung and Micron like before,
- K4Z80325BC (Samsung)
2000 MHz (Copy) - - - > (Paste) 2250 MHz
1800 MHz - - - > 2000 MHz
(1500 or 1550) MHz - - - > 1800 MHz
- MT61K256M32 (Micron)
1875 MHz - - - > 2000 MHz
1750 MHz - - - > (1800 - 1875) MHz
(1500 or 1550) MHz - - - > 1750 MHz
- H56C8H24AIR (Hynix)
1800 MHz - - - > (1875 - 2000) MHz
(1500 or 1550) MHz - - - > 1800 MHz
Memory Clock - tREF
[The recommended ratio is 3.9 and max at 4, for an example, 3900 tREF ÷ 1000 MHz = 3.9]
1000 MHz - 3900 (Samsung, Micron & Hynix)
1250 MHz - 4875 (Samsung, Micron & Hynix)
1360 MHz - 5304 (Samsung only)
(1500 or 1550) MHz - (5850 or 6045) (Samsung, Micron and Hynix)
1750 MHz - 6825 (Micron only)
1800 MHz - 7020 (Samsung, Micron & Hynix)
1875 MHz - 7315 (Micron & Hynix only)
2000 MHz - 7800 (Samsung, Micron and Hynix)
2060 MHz - 8034 (Samsung only)
2250 MHz - 8775 (Samsung only)
÷ Regarding parameters settings as below,
- Core parameters,
Keep the ratio of Core clock to VDD = below 1.80 (preferred 1.75, default is 1.70) as beyond that negative scaling may start which means lowering performance and occurring instability and increasing temperature.
- Memory parameters,
~ Samsung (K4Z80325BC-HC14),
Memory clock at 910 MHz more than this is not stable, VDDCI at 850 mV, MVDD at 1350 mV,
~ Micron (MT61K256M32JE-14),
Memory clock at 910 MHz for power saving and lower temperature like for Samsung memory and 960 MHz for performance, VDDCI at 900 mV (850 mV is the minimum for memory clock 910 MHz and below), MVDD 1365 mV [the minimum is 1350 mV for memory clock 950 MHz and below],
~ Hynix (H56C8H24AIR-SC),
Memory clock at 910 MHz for power saving and lower temperature, VDDCI 780 mV, MVDD 1200 mV, for performance 960 MHz, VDDCI at 825 mV (780 mV is the minimum for memory clock 910 MHz and below), MVDD 1210 mV [the minimum is 1200 mV for memory clock 950 MHz and below],
[*Disclaimer regarding the memory temperature to avoid and prevent its degradation and being baked again that might lead to connection loose,
For Samsung (K4Z80325BC-HC14),
For operating at 24/7, the temperature must not exceed 74° C,
Other than this will fall under the below,
At (80 ± 5)° C, operating for 24/7 requires putting the system on a break of 1 to 2 hour (depending on the ambient temperature) after 48 hour of operation,
At (100 ± 5)° C, operating for 24/7 requires putting the system on a break of 1 to 2 hour (depending on the ambient temperature) after 36 hour of operation,
At (125 ± 5)° C, operating for 24/7 requires putting the system on a break of 1 to 2 hour (depending on the ambient temperature) after 24 hour of operation,
For Micron (MT61K256M32JE-14) and Hynix (H56C8H24AIR-SC), it is the same as for Samsung (K4Z80325BC-HC14) even thought Micron Inc. and SK Hynix stated it can run from (0 to 95)° C, however this is for normal use and not for 24/7 of operation].
Due to air cooling is being used, the highly recommend approximate setting as below,
[For optimal hashrate, keep the gap between the core clock and memory clock at 480 MHz]
[The recommended and safe ratio between VDDCI and Memory clock is 2.14 (Default is 2.06) For Samsung and Micron, 2.34 (Default is 2.25) for Hynix, for example: 1820 (910*2) MHz ÷ 850 = ~2.14]
[The safe and recommend ratio between the MVDD and Memory clock is 1.41 for Samsung and Micron and 1.59 for Hynix at memory clock ABOVE 1900 (950*2) MHz]
Core clock, VDD : Memory clock, VDDCI, MVDD, TeamRedMiner Hashrate
~ Samsung and Micron,
- 1330 MHz, 750 mV : 850 (1700/2) MHz, 800 mV, 1350 mV, ~52.10 MH/s,
- 1360 MHz, 760 or 770 mV : 880 (1760/2) MHz, 820 mV, 1350 mV, ~54.10 MH/s,
- 1380 MHz, 770 or 780 mV : 900 (1800/2) MHz, 840 mV, 1350 mV, ~55.30 MH/s,
~ Micron,
- 1415 MHz, 790 or 800 mV : 935 (1870/2) MHz, 875 mV, 1350 mV, ~57.10 MH/s,
- 1430 MHz, 800 or 810 mV : 950 (1900/2) MHz, 890 mV, 1350 mV, ~58.10 MH/s.
~ Hynix,
- 1330 MHz, 750 mV : 850 (1700/2) MHz, 780 mV, 1200 mV, ~52.10 MH/s,
- 1360 MHz, 760 or 770 mV : 880 (1760/2) MHz, 780 mV, 1200 mV, ~54.10 MH/s,
- 1380 MHz, 770 or 780 mV : 900 (1800/2) MHz, 780 mV, 1200 mV, ~55.10 MH/s,
- 1415 MHz, 790 or 800 mV : 935 (1870/2) MHz, 800 or 830 mV, 1200 mV, ~57.10 MH/s,
- 1430 MHz, 800 or 810 mV : 950 (1900/2) MHz, 820 or 830 mV, 1200 mV, ~58.10 MH/s.